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 SPICE MODEL: DMN5L06K
Lead-free Green
DMN5L06K
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features
NEW PRODUCT
* * * * * * * * *
Low On-Resistance: RDS(ON) Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Up To 2kV "Green" Device (Note 4) Qualified to AEC-Q101 standards for High Reliability
J E G TOP VIEW S D G H K L B C D A
SOT-23 Dim A B C D E
M
Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0
Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8
G H J K
Mechanical Data
* * * * * * * *
Case: SOT-23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish 3/4 Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: See Last Page Ordering & Date Code Information: See Last Page Weight: 0.008 grams (approximate)
Gate Protection Diode Source Gate Drain
L M a
All Dimensions in mm
ESD protected up to 2kV
EQUIVALENT CIRCUIT
Maximum Ratings
Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1)
@ TA = 25C unless otherwise specified Characteristic Symbol VDSS VGSS Continuous Pulsed (Note 3) ID Pd RqJA Tj, TSTG Value 50 20 300 800 350 357 -65 to +150 Units V V mA mW C/W C
Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Note: 1. 2. 3. 4.
Device mounted on FR-4 PCB. No purposefully added lead. Pulse width 10mS, Duty Cycle 1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DS30929 Rev. 2 - 2
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DMN5L06K
a Diodes Incorporated
Electrical Characteristics
@ TA = 25C unless otherwise specified Symbol BVDSS @ TC = 25C IDSS IGSS Min 50 3/4 3/4 Typ 3/4 3/4 3/4 Max 3/4 60 1 500 50 1.2 3.0 2.5 2.0 3/4 3/4 1.4 50 25 5.0 Unit V nA A nA nA V W A mS V pF pF pF VDS = 25V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 10mA VDS = 50V, VGS = 0V VGS = 12V, VDS = 0V VGS = 10V, VDS = 0V VGS = 5V, VDS = 0V VDS = VGS, ID = 250mA VGS = 1.8V, ID = 50mA VGS = 2.5V, ID = 50mA VGS = 5.0V, ID = 50mA VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA
NEW PRODUCT
Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
Notes:
VGS(th) RDS (ON) ID(ON) |Yfs| VSD Ciss Coss Crss
0.49 3/4 3/4 3/4 0.5 200 0.5 3/4 3/4 3/4
3/4 3/4 3/4 3/4 1.4 3/4 3/4 3/4 3/4 3/4
5. Short duration test pulse used to minimize self-heating effect.
1.5
VGS = 10V 8V 6V 5V 4V 3V
8V 10V 5V 4V 3V
1
VDS = 10V Pulsed
1.2
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
6V
0.9
TA = 150 C
0.1
TA = 125 C TA = 85 C TA = 25 C
0.6
0.3
TA = -25 C TA = -55 C
0 0 1 2 3 4 5
0.01 0 1 2 3
VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics
VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics
DS30929 Rev. 2 - 2
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DMN5L06K
1.0
10
VDS = 10V ID = 1mA Pulsed
VGS(th), GATE THRESHOLD VOLTAGE (V)
NEW PRODUCT
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -55 -25 0 25 50 75
VGS = 10V Pulsed
TA = 125 C TA = 150 C
TA = 85 C
1
TA = 25 C TA = -25 C
TA = -55 C
100
125
150
0.1 0.001
0.01
0.1
1
Tch, CHANNEL TEMPERATURE (C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature
ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
2.0
10
VGS = 5V Pulsed
TA = 125 C TA = 150 C
TA = 85 C
1.8 1.6 1.4 1.2
TA = 25 C Pulsed
ID = 280mA
ID = 140mA
1
TA = 25 C TA = -25 C
TA = -55 C
1.0 0.8 0.6 0.4 0.2
0.1 0.001 0.01 0.1 1
0 0 2 4 6 8 10 12 14 16 18 20
ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
3
VGS = 10V Pulsed
VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage
1
VGS = 0V Pulsed
IDR, REVERSE DRAIN CURRENT (A)
TA = 150 C
2
ID = 280mA ID = 140mA
0.1
TA = 125 C
TA = 85 C
1
0.01
TA = 25 C
TA = -25 C TA = -55 C
0 -50 -25 0 25 50 75 100 125 150 Tch, CHANNEL TEMPERATURE ( C) Fig. 7 Static Drain-Source On-State Resistance vs. Channel Temperature
0.001 0 0.5 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage 1
DS30929 Rev. 2 - 2
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DMN5L06K
1
|Yfs|, FORWARD TRANSFER ADMITTANCE (S)
1
VDS = 10V Pulsed TA = -55 C TA = -25 C TA = 25 C
IDR, REVERSE DRAIN CURRENT (A)
NEW PRODUCT
VGS = 10V
0.1
0.1
TA = 85 C TA = 125 C TA = 150 C
0.01
VGS = 0V
TA = 25C Pulsed
0.001 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Reverse Drain Current vs. Source-Drain Voltage
0.01 0.001 0.01 0.1 1
ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current
400
Pd, POWER DISSIPATION (mW)
350 300 250 200 150 100 50 0 0 50 100 150 TA, AMBIENT TEMPERATURE ( C) Fig. 11 Derating Curve - Total
RqJA = 357 C/W
Ordering Information
Device DMN5L06K-7
Notes:
(Note 6) Packaging SOT-23 Shipping 3000/Tape & Reel
6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
DS30929 Rev. 2 - 2
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DMN5L06K
Marking Information
NEW PRODUCT
DAB
DAB = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September
Date Code Key Year Code Month Code Jan 1 Feb 2 2006 T Mar 3 Apr 4 May 5 2007 U Jun 6 Jul 7 Aug 8 2008 V Sep 9 Oct O 2009 W Nov N Dec D
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DS30929 Rev. 2 - 2
YM
IMPORTANT NOTICE
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DMN5L06K


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